Ju, X (reprint author), Univ Sci & Technol Beijing, Dept Phys, Beijing 100083, Peoples R China.
The distribution and nature of defects induced by H ion, He ion, and mixed-beam H and He ion implantation in China low-activation martensitic (CLAM) steel were studied by positron-annihilation spectroscopy. The evolution of vacancy-type defects in the CLAM steel was detected when the ion implantation dosage was varied. Significant differences in the S parameter-positron energy profile in response to the different implanted ions were observed. The implantation-induced defects were analyzed using VEPFIT. One type of defect was found in all ion-implanted samples. (C) 2011 Elsevier B.V. All rights reserved.