Chen, ZH (reprint author), Chinese Acad Sci, Lab Opt Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China.
Article; Proceedings Paper
La-Sn-Mn-O (LSMO) thin films have been first epitaxially grown on (100) LaAlO3 single-crystal substrates by pulsed laser deposition (PLD). X-ray diffraction analyses showed that the structure of the film was perovskitelike with a uniaxial orientation. The temperature dependence of resistivity showed that an insulator-metal transition took place at the temperature T-p, which was a function of the film thickness and the tin concentration. The calculated magnetoresistance ratio MR% indicates that the maximum MR%,,, is as high as 10(3)% at 6 Tesla and 233 K, and there still exist 60% values of MR% at room temperature and 6 Tesla. All these results reveal that the present film is a novel colossal magnetoresistance material with the potential in the technological applications. The investigation of the magnetic properties indicated that the Curie temperature T-c systematically varied with the tin concentration. At low temperatures, the samples were spin-glass-like with the freezing temperature affected by the film thickness and the tin concentration. The study of the electronic structure showed that the tin concentration had significant influence on the core level and structure of valence electron distribution. (C) 2000 Elsevier Science S.A. All rights reserved.
Guo, XX,Dai, SY,Zhou, YL,et al. Study of colossal magnetoresistance material La-Sn-Mn-O epitaxial films[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,76(1):#REF!.
Guo, XX.,Dai, SY.,Zhou, YL.,Chen, ZH.,Yang, GZ.,...&钱海杰.(2000).Study of colossal magnetoresistance material La-Sn-Mn-O epitaxial films.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,76(1),#REF!.
Guo, XX,et al."Study of colossal magnetoresistance material La-Sn-Mn-O epitaxial films".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 76.1(2000):#REF!.