Experiment on hard X-rays damage effects for memory | |
其他题名 | 存储器硬X射线损伤效应实验 |
Guo, HX; Han, FB; Chen, YS; Luo, JH; Gong, JC; Xie, YN; Huang, YY; He, W; Hu, TD; Xie YN(谢亚宁)![]() ![]() ![]() | |
2003 | |
发表期刊 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
![]() |
卷号 | 27页码:5-9 |
通讯作者 | Guo, HX (reprint author), NW Inst Nucl Technol, Xian 710024, Peoples R China. |
文章类型 | Article |
摘要 | Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration front 16k to 4M irradiated by 20-100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source,gamma-rays. The ratio of radiation damage to the them irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for gamma-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented. |
关键词 | floating ROMs SRAM dose enhancement effects synchrotron radiation |
学科领域 | Physics |
收录类别 | SCI |
WOS类目 | Physics, Nuclear ; Physics, Particles & Fields |
WOS记录号 | WOS:000220592300002 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ihep.ac.cn/handle/311005/225455 |
专题 | 多学科研究中心 |
推荐引用方式 GB/T 7714 | Guo, HX,Han, FB,Chen, YS,et al. Experiment on hard X-rays damage effects for memory[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:5-9. |
APA | Guo, HX.,Han, FB.,Chen, YS.,Luo, JH.,Gong, JC.,...&胡天斗.(2003).Experiment on hard X-rays damage effects for memory.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,5-9. |
MLA | Guo, HX,et al."Experiment on hard X-rays damage effects for memory".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):5-9. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
120.pdf(643KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | 请求全文 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论