IHEP OpenIR  > 多学科研究中心
Experiment on hard X-rays damage effects for memory
其他题名存储器硬X射线损伤效应实验
Guo, HX; Han, FB; Chen, YS; Luo, JH; Gong, JC; Xie, YN; Huang, YY; He, W; Hu, TD; Xie YN(谢亚宁); Huang YY(黄宇营); He W(何伟); Hu TD(胡天斗)
2003
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号27页码:5-9
通讯作者Guo, HX (reprint author), NW Inst Nucl Technol, Xian 710024, Peoples R China.
文章类型Article
摘要Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration front 16k to 4M irradiated by 20-100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source,gamma-rays. The ratio of radiation damage to the them irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for gamma-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.
关键词floating ROMs SRAM dose enhancement effects synchrotron radiation
学科领域Physics
收录类别SCI
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000220592300002
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225455
专题多学科研究中心
推荐引用方式
GB/T 7714
Guo, HX,Han, FB,Chen, YS,et al. Experiment on hard X-rays damage effects for memory[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:5-9.
APA Guo, HX.,Han, FB.,Chen, YS.,Luo, JH.,Gong, JC.,...&胡天斗.(2003).Experiment on hard X-rays damage effects for memory.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,5-9.
MLA Guo, HX,et al."Experiment on hard X-rays damage effects for memory".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):5-9.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
120.pdf(643KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Guo, HX]的文章
[Han, FB]的文章
[Chen, YS]的文章
百度学术
百度学术中相似的文章
[Guo, HX]的文章
[Han, FB]的文章
[Chen, YS]的文章
必应学术
必应学术中相似的文章
[Guo, HX]的文章
[Han, FB]的文章
[Chen, YS]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。