Experiment on hard X-rays damage effects for memory

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	Experiment on hard X-rays damage effects for memory
其他题名	存储器硬X射线损伤效应实验
	Guo, HX; Han, FB; Chen, YS; Luo, JH; Gong, JC; Xie, YN; Huang, YY; He, W; Hu, TD; Xie YN(谢亚宁); Huang YY(黄宇营); He W(何伟); Hu TD(胡天斗)
	2003
发表期刊	HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号	27 页码:5-9
通讯作者	Guo, HX (reprint author), NW Inst Nucl Technol, Xian 710024, Peoples R China.
文章类型	Article
摘要	Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration front 16k to 4M irradiated by 20-100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source,gamma-rays. The ratio of radiation damage to the them irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for gamma-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.
关键词	floating ROMs SRAM dose enhancement effects synchrotron radiation
学科领域	Physics
收录类别	SCI
WOS类目	Physics, Nuclear ; Physics, Particles & Fields
WOS记录号	WOS:000220592300002
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ihep.ac.cn/handle/311005/225455
专题	多学科研究中心
推荐引用方式 GB/T 7714	Guo, HX,Han, FB,Chen, YS,et al. Experiment on hard X-rays damage effects for memory[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27:5-9.
APA	Guo, HX.,Han, FB.,Chen, YS.,Luo, JH.,Gong, JC.,...&胡天斗.(2003).Experiment on hard X-rays damage effects for memory.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27,5-9.
MLA	Guo, HX,et al."Experiment on hard X-rays damage effects for memory".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27(2003):5-9.

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