Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Omega/square, a lowest resistivity of 3.61 x 10(-4) Omega cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (mu) and carrier concentration (n) was interpreted by a functional relation of mu similar to n(-0.127), which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. (C) 2014 Elsevier B. V. All rights reserved.
Xiao, Y,Gao, FY,Dong, GB,et al. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature[J]. THIN SOLID FILMS,2014,556:155-159.
Xiao, Y.,Gao, FY.,Dong, GB.,Guo, TT.,Liu, QR.,...&Diao, XG；叶笛.(2014).Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature.THIN SOLID FILMS,556,155-159.
Xiao, Y,et al."Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature".THIN SOLID FILMS 556(2014):155-159.