Compression behavior of nanocrystalline TiN
Wang, QM; He, DW; Peng, F; Xiong, L; Wang, JH; Wang, P; Xu, C; Liu, J;熊伦; Liu J(刘景)
AbstractWe have investigated the size-dependent high pressure behavior of nanocrystalline TiN using an angle-dispersive X-ray diffraction technique in a diamond-anvil cell at room temperature. No phase transition was observed during compression for each sample. A fit of the pressure versus volume data to a second Birch-Murnaghan equation yielded the following parameters for 16 nm, 34 nm and 80 nm, zero-pressure volume, V-0=75.77 angstrom(3), 75.98 angstrom(3) and 76.06 angstrom(3), bulk modulus, B-0=320(7) GPa, 338(6) GPa and 287(3) GPa, respectively. This result along with a reanalysis of previous studies on TiN indicates that the bulk modulus first increases and then decreases with decreasing grain size. The compressibility of TiN has a minimum at similar to 34 nm. (C) 2013 Elsevier Ltd. All rights reserved.
KeywordNanocrystalline TiN Bulk modulus High pressure
Subject AreaPhysics
Indexed BySCI ; ADS
WOS IDWOS:000331635900007
ADS Bibcode2014SSCom.182...26W
ADS URLhttps://ui.adsabs.harvard.edu/abs/2014SSCom.182...26W
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2014SSCom.182...26W/citations
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Cited Times:6 [ADS]
Document Type期刊论文
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GB/T 7714
Wang, QM,He, DW,Peng, F,et al. Compression behavior of nanocrystalline TiN[J]. SOLID STATE COMMUNICATIONS,2014,182:26-29.
APA Wang, QM.,He, DW.,Peng, F.,Xiong, L.,Wang, JH.,...&刘景.(2014).Compression behavior of nanocrystalline TiN.SOLID STATE COMMUNICATIONS,182,26-29.
MLA Wang, QM,et al."Compression behavior of nanocrystalline TiN".SOLID STATE COMMUNICATIONS 182(2014):26-29.
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