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A novel porous substrate for the growth of high quality GaN crystals by HVPE
Dai, YB; Wu, YZ; Zhang, L; Shao, YL; Tian, Y; Huo, Q; Zhang, P; Cao, XZ; Hao, XP;张鹏(正); Cao XZ(曹兴忠)
2014
发表期刊RSC ADVANCES
卷号4期号:66页码:35106-35111
摘要An original high temperature annealing (HTA) technology has been established to fabricate a porous substrate with a layer of inverted pyramid structures. The details about the formation of the porous substrate and the related mechanism were discussed. It was proved that the porous structures were formed through an etching-like mechanism assisted by SiO2 patterned masks. High-quality GaN crystals have been prepared using the as-prepared porous substrate. The growth experiments demonstrated that such porous substrates were mechanically fragile. The porous structures are suitable to be used as a release layer for the growth of GaN crystals with low stress and defect density.
学科领域Chemistry
DOI10.1039/c4ra04637d
收录类别SCI
WOS记录号WOS:000341287700049
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225351
专题多学科研究中心
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GB/T 7714
Dai, YB,Wu, YZ,Zhang, L,et al. A novel porous substrate for the growth of high quality GaN crystals by HVPE[J]. RSC ADVANCES,2014,4(66):35106-35111.
APA Dai, YB.,Wu, YZ.,Zhang, L.,Shao, YL.,Tian, Y.,...&曹兴忠.(2014).A novel porous substrate for the growth of high quality GaN crystals by HVPE.RSC ADVANCES,4(66),35106-35111.
MLA Dai, YB,et al."A novel porous substrate for the growth of high quality GaN crystals by HVPE".RSC ADVANCES 4.66(2014):35106-35111.
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