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Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy
Dai, YB; Shao, YL; Wu, YZ; Hao, XP; Zhang, P; Cao, XZ; Zhang, L; Tian, Y; Zhang, HD;张鹏(正); Cao XZ(曹兴忠)
2014
发表期刊RSC ADVANCES
卷号4期号:41页码:21504-21509
摘要GaN crystals were grown on MOCVD-GaN/Al2O3 templates (MGA) and MOCVD-GaN/6H-SiC templates (MGS) in a hydride vapour phase epitaxy (HVPE) process where the V/III ratio was controlled. The tensile stress that exists in MGS was controlled by an increasing V/III ratio. The compressive stress that appears in MGA was controlled by a decreasing V/III ratio. The mechanism of stress control using the V/III ratio is discussed in terms of the interrelation of the stress, the V/III ratio and the crystal growth. The stress in these two kinds of substrates causes differences in atomic mobility which may be compensated by varying the V/III ratio. It is found that a larger V/III ratio results in a higher atomic mobility. Thus, atomic mobility is retarded by compressive stress and increased by tensile stress. This method of stress control has been shown to provide worthwhile guidance for GaN growth on different templates, and under different conditions in other investigations.
学科领域Chemistry
DOI10.1039/c3ra46940a
收录类别SCI
WOS记录号WOS:000336837100044
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225346
专题多学科研究中心
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Dai, YB,Shao, YL,Wu, YZ,et al. Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy[J]. RSC ADVANCES,2014,4(41):21504-21509.
APA Dai, YB.,Shao, YL.,Wu, YZ.,Hao, XP.,Zhang, P.,...&曹兴忠.(2014).Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy.RSC ADVANCES,4(41),21504-21509.
MLA Dai, YB,et al."Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy".RSC ADVANCES 4.41(2014):21504-21509.
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