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A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)
Yue, DM; Cui, RL; Ruan, XL; Huang, H; Guo, XH; Wang, ZZ; Gao, XF; Yang, SY; Dong, JQ; Yi, FT; Sun, BY;伊福廷; Sun BY(孙宝云)
2014
发表期刊ORGANIC ELECTRONICS
卷号15期号:12页码:3482-3486
摘要The ITO/Gd@C-82-PVK/Al sandwich nonvolatile memory device was developed based on polymer containing carbazole moieties as electron donors and Gd@C-82 as electron acceptors for the first time. The results of I-V characteristic test indicated that the new material exhibited typical bistable electrical switching and a nonvolatile rewritable memory effect, with a turn-on voltage of about -1.5 V and an ON/OFF-state current ratio of more than 10(4). We propose that such a low turn-on voltage is caused due to the encaged metal and the DFT calculation indicated that the encaged metal served as an important electron trapping center, which facilitated the arrival of turn-on voltage. (C) 2014 Elsevier B.V. All rights reserved.
关键词Metallofullerene Nanoparticle PVK Organic memory DFT calculation Charge transfer
学科领域Materials Science; Physics
DOI10.1016/j.orgel.2014.09.041
收录类别SCI
WOS记录号WOS:000345649200010
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225241
专题多学科研究中心
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GB/T 7714
Yue, DM,Cui, RL,Ruan, XL,et al. A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)[J]. ORGANIC ELECTRONICS,2014,15(12):3482-3486.
APA Yue, DM.,Cui, RL.,Ruan, XL.,Huang, H.,Guo, XH.,...&孙宝云.(2014).A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK).ORGANIC ELECTRONICS,15(12),3482-3486.
MLA Yue, DM,et al."A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)".ORGANIC ELECTRONICS 15.12(2014):3482-3486.
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