IHEP OpenIR
Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films
Zhang, WH; Wang, K; Fan, LL; Liu, LY; Guo, PP; Zou, CW; Wang, JO; Qian, HJ; Ibrahim, K; Yan, WS; Xu, FQ; Wu, ZY;王嘉鸥; Qian HJ(钱海杰); Kui RX(奎热西); Wu ZY(吴自玉)
2014
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
EISSN1932-7455
Volume118Issue:24Pages:12837-12844
AbstractThe coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N-2(+) ion sputtering of the crystalline VO2 films. The critical temperatures (T-c) of the metal-insulator transition (MIT) process are observed to decrease with a value of similar to 18 degrees C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d(parallel to) sub-bands, resulting in the attenuation of the interaction within V-V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2.
Subject AreaChemistry; Science & Technology - Other Topics; Materials Science
DOI10.1021/jp502000s
Indexed BySCI
Language英语
WOS IDWOS:000337783900029
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/225144
Collection中国科学院高能物理研究所
Recommended Citation
GB/T 7714
Zhang, WH,Wang, K,Fan, LL,et al. Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2014,118(24):12837-12844.
APA Zhang, WH.,Wang, K.,Fan, LL.,Liu, LY.,Guo, PP.,...&吴自玉.(2014).Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films.JOURNAL OF PHYSICAL CHEMISTRY C,118(24),12837-12844.
MLA Zhang, WH,et al."Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films".JOURNAL OF PHYSICAL CHEMISTRY C 118.24(2014):12837-12844.
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