IHEP OpenIR  > 多学科研究中心
Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films
Zhang, WH; Wang, K; Fan, LL; Liu, LY; Guo, PP; Zou, CW; Wang, JO; Qian, HJ; Ibrahim, K; Yan, WS; Xu, FQ; Wu, ZY;王嘉鸥; Qian HJ(钱海杰); Kui RX(奎热西); Wu ZY(吴自玉)
2014
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
卷号118期号:24页码:12837-12844
摘要The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N-2(+) ion sputtering of the crystalline VO2 films. The critical temperatures (T-c) of the metal-insulator transition (MIT) process are observed to decrease with a value of similar to 18 degrees C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d(parallel to) sub-bands, resulting in the attenuation of the interaction within V-V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2.
学科领域Chemistry; Science & Technology - Other Topics; Materials Science
DOI10.1021/jp502000s
收录类别SCI
WOS记录号WOS:000337783900029
引用统计
被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225144
专题多学科研究中心
推荐引用方式
GB/T 7714
Zhang, WH,Wang, K,Fan, LL,et al. Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2014,118(24):12837-12844.
APA Zhang, WH.,Wang, K.,Fan, LL.,Liu, LY.,Guo, PP.,...&吴自玉.(2014).Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films.JOURNAL OF PHYSICAL CHEMISTRY C,118(24),12837-12844.
MLA Zhang, WH,et al."Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films".JOURNAL OF PHYSICAL CHEMISTRY C 118.24(2014):12837-12844.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
11151.pdf(2440KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zhang, WH]的文章
[Wang, K]的文章
[Fan, LL]的文章
百度学术
百度学术中相似的文章
[Zhang, WH]的文章
[Wang, K]的文章
[Fan, LL]的文章
必应学术
必应学术中相似的文章
[Zhang, WH]的文章
[Wang, K]的文章
[Fan, LL]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。