The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N-2(+) ion sputtering of the crystalline VO2 films. The critical temperatures (T-c) of the metal-insulator transition (MIT) process are observed to decrease with a value of similar to 18 degrees C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d(parallel to) sub-bands, resulting in the attenuation of the interaction within V-V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2.