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Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor
赵梅;Zhao, M; Liu, L; Liang, RR; Wang, J; Xu, J
2014
发表期刊JAPANESE JOURNAL OF APPLIED PHYSICS
卷号53期号:4页码:41301
摘要The electrical properties of a Ge/HfO2 MOS capacitor with an ultrathin GeSnON interlayer were investigated. A high-quality GeSnON interlayer was formed by annealing a thin GeSn layer in NH3 ambient at 400 degrees C. The GeSn layer was fabricated by a unique processing method: a Sn layer was deposited on Ge substrates using a magnetron sputtering system, and then the top Sn layer was removed using diluted HCl solution, leaving an approximately 1-nm-thick GeSn layer. Through this method, the nitridation of the Ge/HfO2 interface was achieved at low temperature. The electrical measurement results showed that improved capacitance-voltage and leakage current density characteristics were obtained for the Ge/GeSnON/HfO2 MOS capacitor, with a reduction of interface trap density to 4.6 x 10(11) cm(-2)eV(-1). These results indicate effective passivation of the Ge/HfO2 interface with the implementation of the GeSnON interlayer formed by this original technique. (C) 2014 The Japan Society of Applied Physics
学科领域Physics
DOI10.7567/JJAP.53.041301
收录类别SCI
WOS记录号WOS:000336118600009
引用统计
被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225049
专题实验物理中心
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赵梅;Zhao, M,Liu, L,Liang, RR,et al. Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(4):41301.
APA 赵梅;Zhao, M,Liu, L,Liang, RR,Wang, J,&Xu, J.(2014).Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor.JAPANESE JOURNAL OF APPLIED PHYSICS,53(4),41301.
MLA 赵梅;Zhao, M,et al."Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor".JAPANESE JOURNAL OF APPLIED PHYSICS 53.4(2014):41301.
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