This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition to gamma ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 mu m is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results.
Ding, LL,Guo, HX,Chen, W,et al. Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2014,61(4):1777-1784.
Ding, LL.,Guo, HX.,Chen, W.,Yao, ZB.,Yan, YH.,...&Fan, RY；陈栋梁.(2014).Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,61(4),1777-1784.
Ding, LL,et al."Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 61.4(2014):1777-1784.