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Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation
Ding, LL; Guo, HX; Chen, W; Yao, ZB; Yan, YH; Chen, DL; Paccagnella, A; Gerardin, S; Bagatin, M; Chen, L; Sun, HB; Fan, RY;陈栋梁
2014
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷号61期号:4页码:1777-1784
摘要This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition to gamma ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 mu m is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results.
关键词Failure modes focused synchrotron x-ray irradiation SRAM-based FPGA total ionizing dose effect
学科领域Engineering; Nuclear Science & Technology
DOI10.1109/TNS.2014.2314530
收录类别SCI
WOS记录号WOS:000343928100039
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/225028
专题多学科研究中心
推荐引用方式
GB/T 7714
Ding, LL,Guo, HX,Chen, W,et al. Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2014,61(4):1777-1784.
APA Ding, LL.,Guo, HX.,Chen, W.,Yao, ZB.,Yan, YH.,...&Fan, RY;陈栋梁.(2014).Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,61(4),1777-1784.
MLA Ding, LL,et al."Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 61.4(2014):1777-1784.
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