Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy

doi:10.1088/1674-1056/23/9/096101

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	Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy
	Liu J(刘静); Wang JO(王嘉鸥); Yi FT(伊福廷); Liu, J; Wang, JO; Yi, FT; Wu, R; Zhang, N; Kurash, I; Wu R(吴蕊); Zhang N(张念); Kui RX(奎热西)
	2014
发表期刊	CHINESE PHYSICS B
卷号	23 期号:9 页码:96101
摘要	Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl3) at 870 degrees C to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
关键词	X-ray photoelectron spectroscopy (XPS) photoelectric characteristic P-N junction silicon nanopillar
学科领域	Physics
DOI	10.1088/1674-1056/23/9/096101
收录类别	SCI
WOS记录号	WOS:000344057200048
引用统计
文献类型	期刊论文
条目标识符	http://ir.ihep.ac.cn/handle/311005/224902
专题	多学科研究中心
推荐引用方式 GB/T 7714	Liu J,Wang JO,Yi FT,et al. Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy[J]. CHINESE PHYSICS B,2014,23(9):96101.
APA	刘静.,王嘉鸥.,伊福廷.,Liu, J.,Wang, JO.,...&奎热西.(2014).Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy.CHINESE PHYSICS B,23(9),96101.
MLA	刘静,et al."Photoelectric characteristics of silicon P-N junction with nanopillar texture: Analysis of X-ray photoelectron spectroscopy".CHINESE PHYSICS B 23.9(2014):96101.

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