Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature
Tao, P; Huang, L; Cheng, HH; Wang, HH; Wu, XS;王焕华
刊名CHINESE PHYSICS B
2014
卷号23期号:8页码:88112
关键词GeSn films high resolution X-ray diffraction fully-strained Raman measurements
学科分类Physics
DOI10.1088/1674-1056/23/8/088112
英文摘要We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.
收录类别SCI
WOS记录号WOS:000343875300092
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224900
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Tao, P,Huang, L,Cheng, HH,et al. Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature[J]. CHINESE PHYSICS B,2014,23(8):88112.
APA Tao, P,Huang, L,Cheng, HH,Wang, HH,&Wu, XS;王焕华.(2014).Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature.CHINESE PHYSICS B,23(8),88112.
MLA Tao, P,et al."Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature".CHINESE PHYSICS B 23.8(2014):88112.
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