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Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy
An, YK; Wang, SQ; Feng, DQ; Wu, ZH; Liu, JW;吴忠华
2014
发表期刊APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷号115期号:3页码:823-828
摘要films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The influence of Fe doping on the local structure of films was investigated by X-ray absorption spectroscopy (XAS) at Fe K-edge and L-edge. For the films with , Fe ions dissolve into and substitute for sites with a mixed-valence state () of Fe ions. However, a secondary phase of Fe metal clusters is formed in the films with . The qualitative analyses of Fe-K edge extended X-ray absorption fine structure (EXAFS) reveal that the Fe-O bond length shortens and the corresponding Debye-Waller factor () increases with the increase of Fe concentration, indicating the relaxation of oxygen environment of Fe ions upon substitution. The anomalously large structural disorder and very short Fe-O distance are also observed in the films with high Fe concentration. Linear combination fittings at Fe L-edge further confirm the coexistence of and with a ratio of () for the film with . However, a significant fraction () of the Fe metal clusters is found in the film with .
学科领域Materials Science; Physics
DOI10.1007/s00339-013-7868-z
收录类别SCI
WOS记录号WOS:000336362400017
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224824
专题多学科研究中心
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An, YK,Wang, SQ,Feng, DQ,et al. Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,115(3):823-828.
APA An, YK,Wang, SQ,Feng, DQ,Wu, ZH,&Liu, JW;吴忠华.(2014).Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,115(3),823-828.
MLA An, YK,et al."Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 115.3(2014):823-828.
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