Mn-doped In2O3 films were deposited on Si (1 0 0) substrates by the RF-magnetron sputtering technique. The influence of Mn-doping concentration on the local structure and degree of p-d hybridization was investigated by x-ray absorption spectroscopy at the Mn K-edge and L-2,L-3-edge. The results show that Mn ions dissolve in In2O3 and substitute for In3+ sites in the +2 valence states. With the increase in Mn-doping concentration, the Mn-O bonding distance increases monotonically, but integrated intensities of L-2,L-3 edges increase first and then decrease. It can be concluded that there exists an optimal Mn-O bonding distance for the transition probabilities from the 2p state to the p-d hybridization state, which results in increasing degree of p-d hybridization. So the Mn-doping concentration has a significant effect on the local structure and degree of p-d hybridization in Mn-doped In2O3 films.