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Direct graphene synthesis on SiO2/Si substrate by ion implantation
Zhang, R; Wang, ZS; Zhang, ZD; Dai, ZG; Wang, LL; Li, H; Zhou, L; Shang, YX; He, J; Fu, DJ; Liu, JR;何俊
2013
发表期刊APPLIED PHYSICS LETTERS
卷号102期号:19页码:193102
摘要We present results of few-layer graphene synthesis directly on SiO2/Si substrate by negative carbon ion implantation in Ni catalyst films on the top of SiO2/Si substrate. Negative carbon ions at 20 keV were implanted into Ni films with doses of (4-16) x 10(15) cm(-2). The implanted carbon atoms dissolved in Ni at an elevated temperature and diffused towards both sides of the Ni film. After annealing, graphene layers were observed on top of the Ni surface and on SiO2 beneath the Ni film. Formation of graphene layers directly on insulating substrates was achieved by etching the top Ni layer. (C) 2013 AIP Publishing LLC.
学科领域Physics
DOI10.1063/1.4804982
收录类别SCI
WOS记录号WOS:000320440800081
引用统计
被引频次:16[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224669
专题加速器中心
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Zhang, R,Wang, ZS,Zhang, ZD,et al. Direct graphene synthesis on SiO2/Si substrate by ion implantation[J]. APPLIED PHYSICS LETTERS,2013,102(19):193102.
APA Zhang, R.,Wang, ZS.,Zhang, ZD.,Dai, ZG.,Wang, LL.,...&Liu, JR;何俊.(2013).Direct graphene synthesis on SiO2/Si substrate by ion implantation.APPLIED PHYSICS LETTERS,102(19),193102.
MLA Zhang, R,et al."Direct graphene synthesis on SiO2/Si substrate by ion implantation".APPLIED PHYSICS LETTERS 102.19(2013):193102.
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