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Fe-doped InN layers grown by molecular beam epitaxy
Wang, XQ; Liu, ST; Ma, DY; Zheng, XT; Chen, G; Xu, FJ; Tang, N; Shen, B; Zhang, P; Cao, XZ; Wang, BY; Huang, S; Chen, KJ; Zhou, SQ; Yoshikawa, A;张鹏(正); Cao XZ(曹兴忠); Wang BY(王宝义)
2012
发表期刊APPLIED PHYSICS LETTERS
卷号101期号:17页码:171905
摘要Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764013]
学科领域Physics
DOI10.1063/1.4764013
收录类别SCI
WOS记录号WOS:000310726200028
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224662
专题多学科研究中心
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GB/T 7714
Wang, XQ,Liu, ST,Ma, DY,et al. Fe-doped InN layers grown by molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2012,101(17):171905.
APA Wang, XQ.,Liu, ST.,Ma, DY.,Zheng, XT.,Chen, G.,...&王宝义.(2012).Fe-doped InN layers grown by molecular beam epitaxy.APPLIED PHYSICS LETTERS,101(17),171905.
MLA Wang, XQ,et al."Fe-doped InN layers grown by molecular beam epitaxy".APPLIED PHYSICS LETTERS 101.17(2012):171905.
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