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X-ray probe of GaN thin films grown on InGaN compliant substrates
Xu, XQ; Li, Y; Liu, JM; Wei, HY; Liu, XL; Yang, SY; Wang, ZG; Wang, HH;王焕华
2013
发表期刊APPLIED PHYSICS LETTERS
卷号102期号:13页码:132104
摘要GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799279]
学科领域Physics
DOI10.1063/1.4799279
收录类别SCI
WOS记录号WOS:000317240200038
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224648
专题多学科研究中心
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Xu, XQ,Li, Y,Liu, JM,et al. X-ray probe of GaN thin films grown on InGaN compliant substrates[J]. APPLIED PHYSICS LETTERS,2013,102(13):132104.
APA Xu, XQ.,Li, Y.,Liu, JM.,Wei, HY.,Liu, XL.,...&Wang, HH;王焕华.(2013).X-ray probe of GaN thin films grown on InGaN compliant substrates.APPLIED PHYSICS LETTERS,102(13),132104.
MLA Xu, XQ,et al."X-ray probe of GaN thin films grown on InGaN compliant substrates".APPLIED PHYSICS LETTERS 102.13(2013):132104.
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