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Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy
Fan, LL; Chen, S; Wu, YF; Chen, FH; Chu, WS; Chen, X; Zou, CW; Wu, ZY;吴自玉
2013
发表期刊APPLIED PHYSICS LETTERS
卷号103期号:13页码:131914
摘要VO2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al2O3 (0001) substrate. The VO2 film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO2 film is discussed in the framework of the hybridization theory and the valence state of vanadium. (C) 2013 AIP Publishing LLC.
学科领域Physics
DOI10.1063/1.4823511
收录类别SCI
WOS记录号WOS:000325284500035
引用统计
被引频次:57[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224646
专题多学科研究中心
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Fan, LL,Chen, S,Wu, YF,et al. Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2013,103(13):131914.
APA Fan, LL.,Chen, S.,Wu, YF.,Chen, FH.,Chu, WS.,...&Wu, ZY;吴自玉.(2013).Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy.APPLIED PHYSICS LETTERS,103(13),131914.
MLA Fan, LL,et al."Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy".APPLIED PHYSICS LETTERS 103.13(2013):131914.
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