In situ electronic structural study of VO2 thin film across the metal-insulator transition
Mai MT(买买提); 阿布来提; Wu R(吴蕊); Wang JO(王嘉欧); Muhemmed, E; Ablat, A; Wu, R; Wang, JO; Qian, HJ; Ibrahim, K;; Qian HJ(钱海杰); Kui RX(奎热西)
刊名CHINESE PHYSICS B
2013
卷号22期号:12页码:127103
关键词vanadium dioxide metal-insulator transition electronic structure photoemission spectroscopy
学科分类Physics
DOI10.1088/1674-1056/22/12/127103
英文摘要The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V L-II-L-III edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal-insulator transition (MIT) temperature (T-MIT = 67 degrees C). The spectra show evidence for changes in the electronic structure depending on temperature. Across the T-MIT, pure V 3d characteristic d(parallel to) and O 2p-V 3d hybridization characteristic pi(pd), sigma(pd) bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V L-III-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator-semiconductor, semiconductor-metal processes, and vice versa. The conventional MIT at around the T-MIT = 67 degrees C is actually a semiconductor-insulator transformation point.
收录类别SCI
WOS记录号WOS:000329565500060
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224644
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
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Mai MT,阿布来提,Wu R,et al. In situ electronic structural study of VO2 thin film across the metal-insulator transition[J]. CHINESE PHYSICS B,2013,22(12):127103.
APA 买买提.,阿布来提.,吴蕊.,王嘉欧.,Muhemmed, E.,...&奎热西.(2013).In situ electronic structural study of VO2 thin film across the metal-insulator transition.CHINESE PHYSICS B,22(12),127103.
MLA 买买提,et al."In situ electronic structural study of VO2 thin film across the metal-insulator transition".CHINESE PHYSICS B 22.12(2013):127103.
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