Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing
Zhao, CJ; Liu, Y; Zhang, JY; Sun, L; Ding, L; Zhang, P; Wang, BY; Cao, XZ; Yu, GH;张鹏(正); Wang BY(王宝义); Cao XZ(曹兴忠)
刊名APPLIED PHYSICS LETTERS
2012
卷号101期号:7页码:72404
学科分类Physics
DOI10.1063/1.4745916
英文摘要To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 degrees C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 degrees C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745916]
收录类别SCI
WOS记录号WOS:000308263100039
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被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224573
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Zhao, CJ,Liu, Y,Zhang, JY,et al. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing[J]. APPLIED PHYSICS LETTERS,2012,101(7):72404.
APA Zhao, CJ.,Liu, Y.,Zhang, JY.,Sun, L.,Ding, L.,...&曹兴忠.(2012).Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing.APPLIED PHYSICS LETTERS,101(7),72404.
MLA Zhao, CJ,et al."Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing".APPLIED PHYSICS LETTERS 101.7(2012):72404.
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