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Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films
Zhan, P; Wang, WP; Liu, C; Hu, Y; Li, ZC; Zhang, ZJ; Zhang, P; Wang, BY; Cao, XZ; 张鹏(正); Wang BY(王宝义); Cao XZ(曹兴忠)
2012
发表期刊JOURNAL OF APPLIED PHYSICS
卷号111期号:3页码:33501
摘要ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679560]
学科领域Physics
DOI10.1063/1.3679560
收录类别SCI
WOS记录号WOS:000301029800017
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被引频次:80[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224524
专题多学科研究中心
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GB/T 7714
Zhan, P,Wang, WP,Liu, C,et al. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films[J]. JOURNAL OF APPLIED PHYSICS,2012,111(3):33501.
APA Zhan, P.,Wang, WP.,Liu, C.,Hu, Y.,Li, ZC.,...&曹兴忠.(2012).Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films.JOURNAL OF APPLIED PHYSICS,111(3),33501.
MLA Zhan, P,et al."Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films".JOURNAL OF APPLIED PHYSICS 111.3(2012):33501.
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