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Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films
Zhan, P; Wang, WP; Xie, Z; Li, ZC; Zhang, ZJ; Zhang, P; Wang, BY; Cao, XZ; 张鹏(正); Wang BY(王宝义); Cao XZ(曹兴忠)
2012
发表期刊APPLIED PHYSICS LETTERS
卷号101期号:3页码:31913
摘要Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as similar to 0.55 mu(B)/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from similar to 0.44 emu/g (on quartz) to similar to 1.18 emu/g (on silicon) after annealing at 600 degrees C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737881]
学科领域Physics
DOI10.1063/1.4737881
收录类别SCI
WOS记录号WOS:000306748000034
引用统计
被引频次:27[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224520
专题多学科研究中心
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GB/T 7714
Zhan, P,Wang, WP,Xie, Z,et al. Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films[J]. APPLIED PHYSICS LETTERS,2012,101(3):31913.
APA Zhan, P.,Wang, WP.,Xie, Z.,Li, ZC.,Zhang, ZJ.,...&曹兴忠.(2012).Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films.APPLIED PHYSICS LETTERS,101(3),31913.
MLA Zhan, P,et al."Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films".APPLIED PHYSICS LETTERS 101.3(2012):31913.
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