IHEP OpenIR
Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
Zhang, YY; Li, J; Wei, TB; Liu, J; Yi, XY; Wang, GH; Yi, FT;; Yi FT(伊福廷); Liu J(刘静)
2012
发表期刊JAPANESE JOURNAL OF APPLIED PHYSICS ; JAPANESE JOURNAL OF APPLIED PHYSICS
卷号51期号:2页码:20204
摘要

In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced. (C) 2012 The Japan Society of Applied Physics

学科领域Physics
DOI10.1143/JJAP.51.020204
收录类别SCI
WOS记录号WOS:000300627200004
引用统计
被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224502
专题中国科学院高能物理研究所
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Zhang, YY,Li, J,Wei, TB,et al. Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(2):20204.
APA Zhang, YY.,Li, J.,Wei, TB.,Liu, J.,Yi, XY.,...&Liu J.(2012).Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres.JAPANESE JOURNAL OF APPLIED PHYSICS,51(2),20204.
MLA Zhang, YY,et al."Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres".JAPANESE JOURNAL OF APPLIED PHYSICS 51.2(2012):20204.
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