The growth behavior of VO2 crystal film deposited on Al2O3 (0001) monocrystalline substrate by pulsed laser deposition was investigated by high-resolution synchrotron radiation X-ray diffraction (XRD). phi-scan XRD confirmed the in-plane epitaxial matching relation. Furthermore, fine structures observed in the phi-scan indicated that each main peak contained two additional satellites in both the inclined (220) plane and some other vertical planes. A growth model for this observation was proposed based on the intrinsic multi-domain growth of the VO2 crystal at the interface. This observation will give some insights in VO2 epitaxial growth on the hexagonal substrate system. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775580]
Fan, LL,Wu, YF,Si C,et al. Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains[J]. APPLIED PHYSICS LETTERS,2013,102(1):11604.
Fan, LL.,Wu, YF.,姒程.,Si, C.,Pan, GQ.,...&Wu, ZY；吴自玉.(2013).Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains.APPLIED PHYSICS LETTERS,102(1),11604.
Fan, LL,et al."Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains".APPLIED PHYSICS LETTERS 102.1(2013):11604.