Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
Sun, B; Zhao, LX; Wei, TB; Yi, XY; Liu, ZQ; Wang, GH; Li, JM; Yi, FT;伊福廷
刊名OPTICS EXPRESS
2012
卷号20期号:17页码:18537-18544
学科分类Optics
DOI10.1364/OE.20.018537
英文摘要InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones. (C) 2012 Optical Society of America
收录类别SCI
WOS记录号WOS:000307873600002
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被引频次:16[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224359
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
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Sun, B,Zhao, LX,Wei, TB,et al. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface[J]. OPTICS EXPRESS,2012,20(17):18537-18544.
APA Sun, B.,Zhao, LX.,Wei, TB.,Yi, XY.,Liu, ZQ.,...&Yi, FT;伊福廷.(2012).Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.OPTICS EXPRESS,20(17),18537-18544.
MLA Sun, B,et al."Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface".OPTICS EXPRESS 20.17(2012):18537-18544.
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