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Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching
Liu J(刘静); Liu, J; Wang B(王波); 伊福廷;Ashmkhan, M; Wang, B; Yi, FT
2012
发表期刊APPLIED SURFACE SCIENCE
卷号258期号:22页码:8825-8830
摘要Cesium chloride (CsCl) self-assembly has been successfully used to fabricate different average diameter CsCl nanoislands ranging from 50 nm to 1 mu m through controlling CsCl film thickness, relative humidity and developing time. By process control of inductively coupled plasma (ICP) etching, the silicon nanopillars with different high aspect ratio (2-6), morphologies from column to cone, and diameters from 150 to 800 nm have been made by dry etching with the structure mask of CsCl nano hemispheres. The reflectivity of the silicon nanopillars has also been measured for wavelength from 400 to 1000 nm and shows the best antireflection under 5% by native silicon nanopillars with 200 nm average diameter after 40 min ICP etching. With a layer of SiO2 on silicon nanopillars by thermal oxidation process, the reflectivity reaches to below 2.5% at a large range of wavelength from 400 to 1000 nm. (C) 2012 Elsevier B. V. All rights reserved.
关键词Nanoislands Nanopillars Etching time Reflectance
学科领域Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2012.05.099
收录类别SCI
WOS记录号WOS:000306134900065
引用统计
被引频次:25[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224312
专题多学科研究中心
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GB/T 7714
Liu J,Liu, J,Wang B,et al. Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching[J]. APPLIED SURFACE SCIENCE,2012,258(22):8825-8830.
APA 刘静,Liu, J,王波,伊福廷;Ashmkhan, M,Wang, B,&Yi, FT.(2012).Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching.APPLIED SURFACE SCIENCE,258(22),8825-8830.
MLA 刘静,et al."Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etching".APPLIED SURFACE SCIENCE 258.22(2012):8825-8830.
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