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Investigation of microstructures and optical properties in Mn-doped SiC films
An, YK; Duan, LS; Li, X; Wu, ZH; Liu, JW;吴忠华
2012
发表期刊APPLIED SURFACE SCIENCE
卷号258期号:18页码:7070-7074
摘要Mn-doped SiC films were prepared on Si(1 0 0) substrates by RF-magnetron sputtering technique. The microstructures and composition of films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The XRD results show that the Mn-doped SiC films form a 3C-SiC crystal structure and some doped Mn atoms occupy the C sites of SiC lattice. The XPS results suggest that there exist Si-C, C-C and Si-Mn bonds in the films, but the signal of Si-C bond decreases and that of C-C bond increases with the increase of Mn concentration. The Mn K-edge XANES and EXAFS measurements show that the majority of Mn atoms form Mn4Si7 secondary phase compounds and the existence of Mn metal and MnO can be safely excluded. Then the photoluminescence (PL) properties of films are observed at room temperature. The origin of 413-nm PL peak is associated with C cluster centers, which obviously correlates with the Mn-doped concentration. (C) 2012 Elsevier B.V. All rights reserved.
关键词SiC film Mn-doped Microstructures Photoluminescence
学科领域Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2012.03.179
收录类别SCI
WOS记录号WOS:000304004100055
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224289
专题多学科研究中心
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GB/T 7714
An, YK,Duan, LS,Li, X,et al. Investigation of microstructures and optical properties in Mn-doped SiC films[J]. APPLIED SURFACE SCIENCE,2012,258(18):7070-7074.
APA An, YK,Duan, LS,Li, X,Wu, ZH,&Liu, JW;吴忠华.(2012).Investigation of microstructures and optical properties in Mn-doped SiC films.APPLIED SURFACE SCIENCE,258(18),7070-7074.
MLA An, YK,et al."Investigation of microstructures and optical properties in Mn-doped SiC films".APPLIED SURFACE SCIENCE 258.18(2012):7070-7074.
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