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Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn
Zhang, RG; Wang BY(王宝义); Wei L(魏龙); Wang, BY; Wei, L; Li, X; Xu, QS; Peng, SJ; Kurash, I; Qian, HJ; Kui RX(奎热西); Qian HJ(钱海杰)
2012
Source PublicationVACUUM
Volume86Issue:SI8Pages:1210-1214
AbstractZnS thin films with the hexagonal structure have been produced by sulfurizing sputter deposited Zn in sulfur vapor for 1 h. These films have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), synchrotron radiation photoelectron spectroscopy (SR-PES), Auger electron spectroscopy (AES) and UV-VIS transmission spectra. It is found that at the sulfidation temperature (T-S) of 400 degrees C a little and partial Zn can be transformed to ZnS. At T-S = 500 degrees C, the total conversion of Zn in sulfur vapor can take place and form ZnS with a c-axis preferred orientation. The Zn-to-ZnS conversion is kinetically a reactive diffusion process. Also the ZnS thin film has much greater size of grains than the as-deposited Zn film, due to ZnS recrystallization and growth in sulfur vapor. Residual sulfur existing on the surface of ZnS grains leads to the poor optical transparency and great broadening of absorbing edge in the optical transmittance. However, ZnS thin film prepared by gradient sulfidation exhibits the improved optical transmittance, with a band-gap energy of 3.64 eV. (C) 2011 Elsevier Ltd. All rights reserved.
KeywordZnS thin films Sputtering Sulfidation
Subject AreaMaterials Science; Physics
DOI10.1016/j.vacuum.2011.11.003
Indexed BySCI ; ADS
WOS IDWOS:000302444700032
ADS Bibcode2012Vacuu..86.1210Z
ADS URLhttps://ui.adsabs.harvard.edu/abs/2012Vacuu..86.1210Z
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2012Vacuu..86.1210Z/citations
Citation statistics
Cited Times:10 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/224118
Collection多学科研究中心
Recommended Citation
GB/T 7714
Zhang, RG,Wang BY,Wei L,et al. Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn[J]. VACUUM,2012,86(SI8):1210-1214.
APA Zhang, RG.,王宝义.,魏龙.,Wang, BY.,Wei, L.,...&钱海杰.(2012).Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn.VACUUM,86(SI8),1210-1214.
MLA Zhang, RG,et al."Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn".VACUUM 86.SI8(2012):1210-1214.
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