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Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn
Zhang, RG; Wang BY(王宝义); Wei L(魏龙); Wang, BY; Wei, L; Li, X; Xu, QS; Peng, SJ; Kurash, I; Qian, HJ; Kui RX(奎热西); Qian HJ(钱海杰)
2012
发表期刊VACUUM
卷号86期号:SI8页码:1210-1214
摘要ZnS thin films with the hexagonal structure have been produced by sulfurizing sputter deposited Zn in sulfur vapor for 1 h. These films have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), synchrotron radiation photoelectron spectroscopy (SR-PES), Auger electron spectroscopy (AES) and UV-VIS transmission spectra. It is found that at the sulfidation temperature (T-S) of 400 degrees C a little and partial Zn can be transformed to ZnS. At T-S = 500 degrees C, the total conversion of Zn in sulfur vapor can take place and form ZnS with a c-axis preferred orientation. The Zn-to-ZnS conversion is kinetically a reactive diffusion process. Also the ZnS thin film has much greater size of grains than the as-deposited Zn film, due to ZnS recrystallization and growth in sulfur vapor. Residual sulfur existing on the surface of ZnS grains leads to the poor optical transparency and great broadening of absorbing edge in the optical transmittance. However, ZnS thin film prepared by gradient sulfidation exhibits the improved optical transmittance, with a band-gap energy of 3.64 eV. (C) 2011 Elsevier Ltd. All rights reserved.
关键词ZnS thin films Sputtering Sulfidation
学科领域Materials Science; Physics
DOI10.1016/j.vacuum.2011.11.003
收录类别SCI
WOS记录号WOS:000302444700032
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224118
专题多学科研究中心
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GB/T 7714
Zhang, RG,Wang BY,Wei L,et al. Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn[J]. VACUUM,2012,86(SI8):1210-1214.
APA Zhang, RG.,王宝义.,魏龙.,Wang, BY.,Wei, L.,...&钱海杰.(2012).Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn.VACUUM,86(SI8),1210-1214.
MLA Zhang, RG,et al."Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn".VACUUM 86.SI8(2012):1210-1214.
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