Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis
Zhong, DG; Teng, B; Yu, ZH; He, LX; Wang, SH; Jiang, XJ; Ma, JT; Zhuang, SJ; Huang, WX; Huang WX(黄万霞)
刊名CRYSTAL RESEARCH AND TECHNOLOGY
2012
卷号47期号:10页码:1083-1087
关键词KDP crystal profiling growth X-ray topography defects
学科分类Crystallography
DOI10.1002/crat.201200209
英文摘要Potassium dihydrogen phosphate (KDP) crystals were restrained to grow in two dimensions only, using a specially designed platform. This enables us to grow the blanks of frequency conversion elements that satisfy type-II phase matching direction out of a type-II phase-matched seed crystal. Synchrotron radiation topography was used to study the growth mechanism of these profiling grown KDP crystals. It is found that both dislocation growth mechanism and layer growth mechanism were involved in the growing process. Inclusions, growth striations and dislocations were the main defects that influenced the crystalline quality of these crystals. High-resolution X-ray diffraction was employed to study the lattice integrality of the crystal.
收录类别SCI
WOS记录号WOS:000309397800011
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224105
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
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GB/T 7714
Zhong, DG,Teng, B,Yu, ZH,et al. Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2012,47(10):1083-1087.
APA Zhong, DG.,Teng, B.,Yu, ZH.,He, LX.,Wang, SH.,...&黄万霞.(2012).Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis.CRYSTAL RESEARCH AND TECHNOLOGY,47(10),1083-1087.
MLA Zhong, DG,et al."Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis".CRYSTAL RESEARCH AND TECHNOLOGY 47.10(2012):1083-1087.
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