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Vacancy-induced room-temperature ferromagnetism in Ga-TiO2
Bao, NN; Yi, JB; Fan, HM; Qin, XB; Zhang, P; Wang, BY; Ding, J; Li, S;秦秀波; 张鹏(正); Wang BY(王宝义)
2012
发表期刊SCRIPTA MATERIALIA
卷号66期号:10页码:821-824
摘要Ga-TiO2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词Diluted magnetic semiconductor TiO2 Room-temperature ferromagnetism Vacancy
学科领域Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering
DOI10.1016/j.scriptamat.2012.02.031
收录类别SCI
WOS记录号WOS:000302756400026
引用统计
被引频次:16[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224068
专题核技术应用研究中心
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GB/T 7714
Bao, NN,Yi, JB,Fan, HM,et al. Vacancy-induced room-temperature ferromagnetism in Ga-TiO2[J]. SCRIPTA MATERIALIA,2012,66(10):821-824.
APA Bao, NN.,Yi, JB.,Fan, HM.,Qin, XB.,Zhang, P.,...&王宝义.(2012).Vacancy-induced room-temperature ferromagnetism in Ga-TiO2.SCRIPTA MATERIALIA,66(10),821-824.
MLA Bao, NN,et al."Vacancy-induced room-temperature ferromagnetism in Ga-TiO2".SCRIPTA MATERIALIA 66.10(2012):821-824.
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