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Positron annihilation Doppler broadening study of Xe-implanted aluminum
Yu RS(于润升); Yu, RS; Maekawa, M; Kawasuso, A; Wang, BY; Wei, L;; Wang BY(王宝义); Wei L(魏龙)
2013
发表期刊APPLIED SURFACE SCIENCE
卷号282页码:724-728
摘要Positron annihilation Doppler broadening measurements were conducted to characterize information of defects in 380 keV Xe+-implanted aluminum upon thermal annealing at temperatures ranging from 100 to 600 degrees C. The results suggest a broad distribution in the depth of vacancy-type defects in all the as-implanted samples. Meanwhile, with an increase in implantation dose the defect-rich region shifts toward the sample surface. It was found that increasing the annealing temperature triggers surface-directed migration and coalescence of vacancy and XenVm clusters in samples with implantation doses of 1E15 and 1E16 Xe+ cm(-2). In the sample implanted with a high dose of 1E17 Xe+ cm(-2), positron annihilation revealed a decomposition and even elimination of such defects under post-implantation annealing treatment. (C) 2013 Elsevier B.V. All rights reserved.
关键词Positron annihilation Doppler broadening Vacancy Xenon
学科领域Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2013.06.042
收录类别SCI
WOS记录号WOS:000322314800109
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224050
专题多学科研究中心
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Yu RS,Yu, RS,Maekawa, M,et al. Positron annihilation Doppler broadening study of Xe-implanted aluminum[J]. APPLIED SURFACE SCIENCE,2013,282:724-728.
APA 于润升.,Yu, RS.,Maekawa, M.,Kawasuso, A.,Wang, BY.,...&魏龙.(2013).Positron annihilation Doppler broadening study of Xe-implanted aluminum.APPLIED SURFACE SCIENCE,282,724-728.
MLA 于润升,et al."Positron annihilation Doppler broadening study of Xe-implanted aluminum".APPLIED SURFACE SCIENCE 282(2013):724-728.
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