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The hardness of amorphous Si-DLC films by molecular dynamics simulations
Lan, HQ; 刘璨;Liu, C
2013
发表期刊JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
卷号28期号:3页码:444-448
摘要Silicon-doped diamond-like carbon (Si-DLC) films possess the potential to improve wear performance of DLC films in humid atmospheres and at higher temperatures. But many experimental results of Si-DLC films show that their structure and mechanical properties have changed greatly with the increasing silicon content. Therefore, molecular dynamics (MD) simulations were used to generate hydrogen-free Si-DLC films and study their nano-indentation process under the interaction of a diamond indenter. The results show that sp (3)/sp (2)(C) (only carbon atoms) always decreases with the increasing silicon content. But sp (3)/sp (2)(C+Si) ratio increases firstly and reaches a maximum at the silicon content of 0.2, and then decreases with the further increase of the silicon content. Bulk modulus and hardness of the Si-DLC films both decrease with the increasing of the silicon content, which has the same trend with Papakonstantinou and Ikeyama's results. It is concluded that the hardness of the Si-DLC films is dependent on sp (3)/sp (2)(C), not sp (3)/sp (2)(C+Si).
关键词diamond-like carbon film molecular dynamics silicon hardness
学科领域Materials Science
DOI10.1007/s11595-013-0710-9
收录类别SCI
WOS记录号WOS:000319771800007
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223983
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Lan, HQ,刘璨;Liu, C. The hardness of amorphous Si-DLC films by molecular dynamics simulations[J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,2013,28(3):444-448.
APA Lan, HQ,&刘璨;Liu, C.(2013).The hardness of amorphous Si-DLC films by molecular dynamics simulations.JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,28(3),444-448.
MLA Lan, HQ,et al."The hardness of amorphous Si-DLC films by molecular dynamics simulations".JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION 28.3(2013):444-448.
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