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Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array
Wang, WC; Tian, YT; Li, K; Lu, EY; Gong, DS; Li, XJ;卢二阳
2013
发表期刊APPLIED SURFACE SCIENCE
卷号273页码:372-376
摘要A Zn2SiO4 thin film was grown on silicon nanoporous pillar array (Si-NPA) via a chemical vapor deposition method, and the capacitive humidity-sensing properties of Zn2SiO4/Si-NPA were investigated at room temperature. With the relative humidity (RH) changing from 11% to 95%, the capacitance of the sensor increased from 1.67 to 135.97 nF at the testing frequency of 20 Hz, and an overall increment of 8042% was obtained. The response and recovery time was measured to be 48 and 32 s, respectively. The sensor showed a maximum humidity hysteresis of 1.99% at 75% RH. These results indicated that Zn2SiO4/Si-NPA might be a promising material for fabricating high-performance capacitive humidity sensors. (C) 2013 Elsevier B.V. All rights reserved.
关键词Silicon nanoporous pillar array (Si-NPA) Zn2SiO4/Si-NPA Chemical vapor deposition Capacitive humidity sensor
学科领域Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2013.02.045
收录类别SCI
WOS记录号WOS:000317581700056
引用统计
被引频次:20[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223959
专题多学科研究中心
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Wang, WC,Tian, YT,Li, K,et al. Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array[J]. APPLIED SURFACE SCIENCE,2013,273:372-376.
APA Wang, WC,Tian, YT,Li, K,Lu, EY,Gong, DS,&Li, XJ;卢二阳.(2013).Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array.APPLIED SURFACE SCIENCE,273,372-376.
MLA Wang, WC,et al."Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array".APPLIED SURFACE SCIENCE 273(2013):372-376.
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