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Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy
Zhong, J; Deng, JJ; Mao, BH; Xie, T; Sun, XH; Mou, ZG; Hong, CH; Yang, P; Wang, SD;洪才浩
2012
发表期刊CARBON
卷号50期号:1页码:335-338
摘要The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 degrees C. A transition from urea to amino species is observed at 400 degrees C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process. (C) 2011 Elsevier Ltd. All rights reserved.
学科领域Chemistry; Materials Science
DOI10.1016/j.carbon.2011.08.046
收录类别SCI
WOS记录号WOS:000296548800042
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被引频次:53[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223945
专题多学科研究中心
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GB/T 7714
Zhong, J,Deng, JJ,Mao, BH,et al. Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy[J]. CARBON,2012,50(1):335-338.
APA Zhong, J.,Deng, JJ.,Mao, BH.,Xie, T.,Sun, XH.,...&Wang, SD;洪才浩.(2012).Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy.CARBON,50(1),335-338.
MLA Zhong, J,et al."Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy".CARBON 50.1(2012):335-338.
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