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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT;廖元勋; Yi FT(伊福廷)
2012
发表期刊MATERIALS LETTERS
卷号68页码:327-330
摘要Thick GaN films were overgrown by HVPE on nano-island templates, which was fabricated by inductively coupled plasma etching using self-assembled CsCl islands as etch masks. The truncated cone-shape nano-islands exhibited significant effects on improvement of crystalline quality and reduction of crack density for subsequent GaN growth. Photoluminescence and micro-Raman measurements showed improved optical properties and partial strain relaxation in the overgrown GaN when compared to that grown on as-grown template, originated from the initial selective growth. Compared to conventional epitaxial lateral overgrown GaN, the economic and rapid method would put forward new promising pathway to fabricate high quality GaN. (C) 2011 Elsevier B.V. All rights reserved.
关键词HVPE GaN CsCl Nano-island
学科领域Materials Science; Physics
DOI10.1016/j.matlet.2011.10.056
收录类别SCI
WOS记录号WOS:000300480600094
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223941
专题多学科研究中心
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GB/T 7714
Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. MATERIALS LETTERS,2012,68:327-330.
APA Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&伊福廷.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.MATERIALS LETTERS,68,327-330.
MLA Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".MATERIALS LETTERS 68(2012):327-330.
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