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Positron annihilation study on CuInSe2 solar cell thin films
Zhang, LJ; Wang, T; 刘景;李延春; Li, J; Hao, YP; Liu, JD; Zhang, P; Cheng, B; Zhang, ZW; Wang, BY; Ye, BJ; 张鹏(正); Wang BY(王宝义)
2012
发表期刊THIN SOLID FILMS
卷号525页码:68-72
摘要Positron annihilation spectroscopy has been used to investigate CuInSe2 solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe2 thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
关键词Copper indium selenide Annealing Positron annihilation Defect layer
学科领域Materials Science; Physics
DOI10.1016/j.tsf.2012.10.063
收录类别SCI
WOS记录号WOS:000311480400012
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223816
专题多学科研究中心
推荐引用方式
GB/T 7714
Zhang, LJ,Wang, T,刘景;李延春,et al. Positron annihilation study on CuInSe2 solar cell thin films[J]. THIN SOLID FILMS,2012,525:68-72.
APA Zhang, LJ.,Wang, T.,刘景;李延春.,Li, J.,Hao, YP.,...&王宝义.(2012).Positron annihilation study on CuInSe2 solar cell thin films.THIN SOLID FILMS,525,68-72.
MLA Zhang, LJ,et al."Positron annihilation study on CuInSe2 solar cell thin films".THIN SOLID FILMS 525(2012):68-72.
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