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Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing
Yu RS(于润升); Yu, RS; Maekawa, M; Kawasuso, A; Wang, BY; Wei, L; Wang BY(王宝义); Wei L(魏龙)
2012
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
卷号270页码:47-49
摘要Positron annihilation in 800 key Ge+ implanted hexagonal SiC was studied by thermal annealing at temperatures ranging from 800 to 1400 degrees C. The variation in Doppler broadening S values as a function of the incident positron energy suggests a broad distribution in the depth of vacancy defects in the implanted samples. Increasing the annealing temperature triggers the accumulation of vacancies into vacancy clusters. After annealing at 1400 degrees C, defects in the deep region of SiC are eliminated, and Ge precipitation is believed to appear in the sample at the same time. Though Ge has a much more negative positron affinity than SiC, positron annihilation coincidence Doppler broadening measurement reveals that a preferential trapping of positrons in Ge seems impossible. (C) 2011 Elsevier B.V. All rights reserved.
关键词Positron annihilation Defects 4H-SiC
学科领域Instruments & Instrumentation; Nuclear Science & Technology; Physics
DOI10.1016/j.nimb.2011.10.006
收录类别SCI
WOS记录号WOS:000298460200010
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223794
专题多学科研究中心
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GB/T 7714
Yu RS,Yu, RS,Maekawa, M,et al. Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,270:47-49.
APA 于润升.,Yu, RS.,Maekawa, M.,Kawasuso, A.,Wang, BY.,...&魏龙.(2012).Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,270,47-49.
MLA 于润升,et al."Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 270(2012):47-49.
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