IHEP OpenIR  > 多学科研究中心
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
Zhao, DG; Jiang, DS; Le, LC; Wu, LL; Li, L; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Jia, QJ; Yang, H; Jia QJ(贾全杰)
2012
发表期刊JOURNAL OF ALLOYS AND COMPOUNDS
卷号540页码:46-48
摘要The growth parameters which can modify In incorporation and affect electroluminescence (EL) properties of blue-violet InGaN/GaN multiple quantum wells (MQWs) during metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that a suitable increase of trimethylindium (TMIn) flux during the growth of InGaN well can increase both EL intensity and EL peak wavelength. However, when the growth temperature of well decreases from 810 to 800 degrees C, the EL intensity decreases although the EL peak wavelength increases. X-ray diffraction results demonstrate that the interface roughness plays an important role in determining the EL intensity of InGaN/GaN MQWs. It is suggested to grow blue-violet MQWs with high structural quality by suitably increasing the TMIn flux and at a relatively high growth temperature. (C) 2012 Elsevier B.V. All rights reserved.
关键词Nitride materials Crystal growth X-ray diffraction
学科领域Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
DOI10.1016/j.jallcom.2012.06.001
收录类别SCI
WOS记录号WOS:000308068700009
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223791
专题多学科研究中心
推荐引用方式
GB/T 7714
Zhao, DG,Jiang, DS,Le, LC,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,540:46-48.
APA Zhao, DG.,Jiang, DS.,Le, LC.,Wu, LL.,Li, L.,...&贾全杰.(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,540,46-48.
MLA Zhao, DG,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 540(2012):46-48.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
566.pdf(332KB)期刊论文作者接受稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zhao, DG]的文章
[Jiang, DS]的文章
[Le, LC]的文章
百度学术
百度学术中相似的文章
[Zhao, DG]的文章
[Jiang, DS]的文章
[Le, LC]的文章
必应学术
必应学术中相似的文章
[Zhao, DG]的文章
[Jiang, DS]的文章
[Le, LC]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。