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Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si
Li, BS; Zhang, CH; Wang, ZG; Zhong, YR; Wang, BY; Qin, XB; Zhang, LQ; Yang, YT; Wang, R; Jin, YF; Zhong YR(钟玉荣);  Wang BY(王宝义);  Qin XB(秦秀波)
2013
发表期刊VACUUM
卷号93页码:22-27
摘要The effects of the processing conditions on the formation of buried oxide precipitates in He and O co-implanted Si were investigated by the combination of Fourier transform infrared (FTIR) absorption spectroscopy, depth-resolved positron annihilation Doppler spectroscopy, and transmission electron microscopy (TEM). Silicon wafers were implanted with 50 keV He ions at a fluence of 2 x 10(16) cm(-2) and subsequent 150 key O ions at a fluence of 2 x 10(17) cm(-2). For comparison, reference Si wafers were only implanted with 150 keV O ions. The Si-O-Si stretching frequency increases while the peak width of the Si-O-Si stretching absorption band decreases with an increase in annealing temperature. After the same annealing, the peak width of the Si-O-Si stretching absorption band in the He and O co-implanted sample is significantly larger than that in the reference sample. Two kinds of vacancy-type defects are observed by positrons, i.e., vacancy-type defects and vacancy-oxygen complexes. The characteristic S values of vacancy-type defects and vacancy-type complexes in the He and O co-implanted sample are smaller than those of the reference sample. In addition, the thickness of the buried oxide layer in the He and O co-implanted sample is smaller than that in the reference sample. After annealing at 1473 K, the O content is larger in the He and O co-implanted sample compared to that in the reference sample. (C) 2012 Elsevier Ltd. All rights reserved.
关键词Ion implantation Oxide precipitates Si-O stretching band Vacancy-type defects Microstructures
学科领域Materials Science; Physics
DOI10.1016/j.vacuum.2012.11.018
收录类别SCI
WOS记录号WOS:000316092900004
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/223768
专题多学科研究中心
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GB/T 7714
Li, BS,Zhang, CH,Wang, ZG,et al. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si[J]. VACUUM,2013,93:22-27.
APA Li, BS.,Zhang, CH.,Wang, ZG.,Zhong, YR.,Wang, BY.,...&钟玉荣;王宝义;秦秀波.(2013).Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si.VACUUM,93,22-27.
MLA Li, BS,et al."Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si".VACUUM 93(2013):22-27.
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