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Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering
Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Tieying Yang; Xiubo Qin; Huanhua Wang; Quanjie Jia; Runsheng Yu; Baoyi Wang; Jiaou Wang; Kurash Ibrahim; Xiaoming Jiang; Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明)
2009
Pages6
Corresponding Author王焕华
AbstractTransparent p-type conducting Ga-doped SnO_2 thin films were successfully prepared using reactive rf magnetron sputtering.The typical resistivity,hall mobility,hole concentrations and hall coefficient are 3.192×10~(-3)Ωcm,2.75×10~2 cm~2V~(-1)S~(-1),7.131×10~(18) cm~(-3),8.746×10~(-1)cm~3C~(-1), r...
KeywordGa-doped SnO_2 p-type transparent conducting oxide rf magnetron sputtering microstructure
Funding Organizationsupported by Innovation Funding of Institute of High Energy Physics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/223248
Collection多学科研究中心
Recommended Citation
GB/T 7714
Yang TY,Qin XB,Wang HH,et al. Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering[J],2009:6.
APA 杨铁莹.,秦秀波.,王焕华.,Tieying Yang.,Xiubo Qin.,...&姜晓明.(2009).Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering.,6.
MLA 杨铁莹,et al."Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering".(2009):6.
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