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B和H离子顺次注入单晶Si引起的缺陷及其热演变(英文)
Alternative TitleThermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H IONS
张蓓; 张鹏; 王军; 朱飞; 曹兴忠; 王宝义; 刘昌龙
2013
Source Publication原子核物理评论
ISSN1007-4627
Issue4Pages:471-476
Keyword单晶Si B和H离子注入 H板层缺陷 XTEM SPAT
Language中文
Funding OrganizationNational Natural Science Foundation of China(10975107)~~
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/223072
Collection核技术应用研究中心
多学科研究中心
Recommended Citation
GB/T 7714
张蓓,张鹏,王军,等. B和H离子顺次注入单晶Si引起的缺陷及其热演变(英文)[J]. 原子核物理评论,2013(4):471-476.
APA 张蓓.,张鹏.,王军.,朱飞.,曹兴忠.,...&刘昌龙.(2013).B和H离子顺次注入单晶Si引起的缺陷及其热演变(英文).原子核物理评论(4),471-476.
MLA 张蓓,et al."B和H离子顺次注入单晶Si引起的缺陷及其热演变(英文)".原子核物理评论 .4(2013):471-476.
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8431.pdf(3032KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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