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Co掺杂SiC稀磁半导体薄膜的磁与电阻率特性
Alternative TitleMagnetic and resistant properties of co-doped SiCDMS film
李响; 安玉凯; 肖庆; 段岭申; 吴忠华; 刘技文
2011
Source Publication光电子.激光
Issue7Pages:1038-1041
KeywordSiC 稀磁半导体(DMS) Co掺杂 铁磁性
Indexed BySCI
Funding Organization国家自然科学基金资助项目(10904110,60476003) ; 天津市自然科学基金资助项目(10JCYBJC01600) ; 天津市高等学校科技发展基金资助项目(20060902)
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/222866
Collection多学科研究中心
Recommended Citation
GB/T 7714
李响,安玉凯,肖庆,等. Co掺杂SiC稀磁半导体薄膜的磁与电阻率特性[J]. 光电子.激光,2011(7):1038-1041.
APA 李响,安玉凯,肖庆,段岭申,吴忠华,&刘技文.(2011).Co掺杂SiC稀磁半导体薄膜的磁与电阻率特性.光电子.激光(7),1038-1041.
MLA 李响,et al."Co掺杂SiC稀磁半导体薄膜的磁与电阻率特性".光电子.激光 .7(2011):1038-1041.
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