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水蒸气退火多孔硅发光性能的正电子谱学研究
Alternative TitlePositron annihilation study of photoluminescence of porous silicon treated by water vapor annealing
李卓昕; 王丹妮; 王宝义; 薛德胜; 魏龙; 秦秀波
2010
Source Publication物理学报
Issue12Pages:8915-8919
Keyword多孔硅 光致发光 正电子湮没谱
Indexed BySCI
Funding Organization国家自然科学基金(批准号:10835006,10705031)资助的课题~~
WOS IDWOS:000286689500086
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Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/222827
Collection多学科研究中心
核技术应用研究中心
Recommended Citation
GB/T 7714
李卓昕,王丹妮,王宝义,等. 水蒸气退火多孔硅发光性能的正电子谱学研究[J]. 物理学报,2010(12):8915-8919.
APA 李卓昕,王丹妮,王宝义,薛德胜,魏龙,&秦秀波.(2010).水蒸气退火多孔硅发光性能的正电子谱学研究.物理学报(12),8915-8919.
MLA 李卓昕,et al."水蒸气退火多孔硅发光性能的正电子谱学研究".物理学报 .12(2010):8915-8919.
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