| 退火温度对CsI薄膜闪烁特性的影响 | |
| Alternative Title | Effects of annealing temperature on scintillation properties of thermally evaporated CsI films |
程峰; 钟玉荣; 王宝义 ; 王天民; 魏龙
| |
| 2008 | |
| Source Publication | 核技术
 |
| Issue | 1Pages:15-18 |
| Corresponding Author | 程峰 |
| Keyword | CsI薄膜 热蒸发 闪烁性能 |
| Document Type | 期刊论文 |
| Identifier | http://ir.ihep.ac.cn/handle/311005/222623 |
| Collection | 多学科研究中心 |
| Recommended Citation GB/T 7714 | 程峰,钟玉荣,王宝义,等. 退火温度对CsI薄膜闪烁特性的影响[J]. 核技术,2008(1):15-18. |
| APA | 程峰,钟玉荣,王宝义,王天民,&魏龙.(2008).退火温度对CsI薄膜闪烁特性的影响.核技术(1),15-18. |
| MLA | 程峰,et al."退火温度对CsI薄膜闪烁特性的影响".核技术 .1(2008):15-18. |
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