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孤立分散在SiO_2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究
Alternative TitleMS-XANES Studies on the Interface Eect of Semiconductor InSb Nanoparticles Embedded in a-SiO2 Matrix
陈栋梁; 吴自玉; 韦世强
2006
Source Publication高能物理与核物理
Issue5Pages:476-480
Corresponding Author吴自玉
KeywordInSb纳米颗粒 界面效应 MS-XANES计算
Funding Organization国家自然科学基金纳米重大研究计划(90206032) 国家杰出青年基金(10125523) 中国科学院知识创新工程重要方向项目(KJCX2-SW-N11)资助~~
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/222400
Collection多学科研究中心
Recommended Citation
GB/T 7714
陈栋梁,吴自玉,韦世强. 孤立分散在SiO_2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究[J]. 高能物理与核物理,2006(5):476-480.
APA 陈栋梁,吴自玉,&韦世强.(2006).孤立分散在SiO_2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究.高能物理与核物理(5),476-480.
MLA 陈栋梁,et al."孤立分散在SiO_2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究".高能物理与核物理 .5(2006):476-480.
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