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Mo沉积成膜质量与磁控溅射条件间关系的STM研究
黎刚; 杨海强; 王俊; 崔明启
1997
Source Publication电子显微学报
Issue4Pages:453-454
Corresponding Author黎刚
Keyword磁控溅射 Mo STM 晶粒间 线度 界变 沉积时间 表面形貌 加速电压 粗糙度
Funding Organization国家自然科学基金
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/221537
Collection多学科研究中心
Recommended Citation
GB/T 7714
黎刚,杨海强,王俊,等. Mo沉积成膜质量与磁控溅射条件间关系的STM研究[J]. 电子显微学报,1997(4):453-454.
APA 黎刚,杨海强,王俊,&崔明启.(1997).Mo沉积成膜质量与磁控溅射条件间关系的STM研究.电子显微学报(4),453-454.
MLA 黎刚,et al."Mo沉积成膜质量与磁控溅射条件间关系的STM研究".电子显微学报 .4(1997):453-454.
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