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单层MoS2纳米片、制备方法以及纳米药物载体
尹文艳; 谷战军; 赵宇亮
2013-12-27
Date Available2014-04-09
Subtype审中
Patent NumberCN103705928A
Document Type专利
Identifierhttp://ir.ihep.ac.cn/handle/311005/211163
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
尹文艳,谷战军,赵宇亮. 单层MoS2纳米片、制备方法以及纳米药物载体. CN103705928A[P]. 2013-12-27.
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